Black Lithium Niobate wafer

Specifications
Material: Black Lithium Niobate Wafer
Curie Temp: 1142±2.0℃
Cutting Angle: X/Y/Z/Y36/Y41/Y64/Y128/etc
Diameter/size: 3”/4”/6" & 8" LN wafer
Tol(±): <0.20 mm
Thickness: 0.18 ~ 0.5mm or more
Primary Flat: 22mm /32mm /42.5mm /57.5mm /semi notch

The reduction technique is used to produce black lithium niobate (LiNbO3), which has a high ability to neutralize charges even if the electric potential occurs instantaneously. The pyroelectric effect of LN wafer is almost eliminated and the transmittance is significantly reduced. The piezoelectric properties of black lithium niobate wafers are no different from those of standard wafers. Therefore, black reduced lithium niobate wafers are widely used to produce higher frequency surface acoustic wave devices.

Free-pyro black LiNbO3 and LiTaO3 wafers were prepared successfully by chemical reduction under a mixed atmosphere of CO2 and H2. Bulk conductivity and optical transmittance of the black LiNbO3 and black LiTaO3 wafers were measured. The results showed that the pyroelectric effect for the reduced wafers was almost eliminated and the transmittance decreased considerably. The reduction process did not change Curie temperatures or piezoelectric properties of LN and LT wafers, while neutralize electrical charges even if the electrical potential occurs instantaneously.

The reduction technology is used to produce Black Lithium Niobate (LiNbO3) which has high ability to neutralize electrical charges even if the electrical potential occurs instantaneously. Black Lithium Niobate shows no difference in piezoelectric properties from standard wafers. As a result, black reduced lithium niobate wafers are widely adopted to produce higher frequency SAW devices.

LTV (5mmx5mm)  <1µm
TTV  <3µm
Bow -30<bow<30
Warp <40µm
PLTV(<0.5um) ≥95%(5mm*5mm)
Surface Type Single Side Polished /Double Sides Polished
Polished side Ra <0.5nm
Back Side Criteria General is 0.2-0.5µm or as customized
Edge Criteria R=0.2mm or Bullnose
Wafer Surface Criteria Transmissivity general:5.9×10-11<s<2.0*10-10 at 25℃
Contamination, None
Particles ¢>0.3 µ  m <= 30
Scratch , Chipping None
Defect No edge cracks, scratches, saw marks, stains
Packaging Qty/Wafer box 25pcs per box
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