Germanium wafer D30mm

Germanium wafers (D30mm) exhibit exceptional technical and physical characteristics that make them indispensable in advanced technologies. Germanium has a high electron mobility of ~3900 cm²/V·s, enabling faster switching speeds in semiconductors, which is critical for high-frequency applications like RF devices and satellite communications.

Its bandgap of 0.67 eV aligns well with infrared wavelengths, making it ideal for IR optics, photodetectors, and thermal imaging systems. Germanium’s density (5.32 g/cm³) and refractive index (~4.0) ensure excellent light absorption and optical performance.

Additionally, its thermal conductivity (59 W/m·K) allows efficient heat dissipation, ensuring device stability. These properties, combined with its mechanical strength and compatibility with silicon-based processes, enhance its versatility. However, Germanium’s susceptibility to oxidation requires protective coatings, and its higher cost compared to silicon can limit widespread use. These traits dictate its application in specialized, high-performance fields where reliability and precision are paramount.

Picture show of our Windows/Ge wafers

Property of Germanium

• Clear Aperture (%): 90.00
• Dimensional Tolerance (mm): +0.0/-0.1
• Coefficient of Thermal Expansion CTE (10-6/°C): 6.1
• Density (g/cm3): 5.33
• Index of Refraction nd: 4.002 @ 11µm
• Knoop Hardness (kg/mm2): 780.00
• Parallelism (arcmin): <1
• Poisson’s Ratio: 0.28
• Substrate: Germanium (Ge)
• Surface Quality: 60-40
• Thickness Tolerance (mm): ±0.1