MgO doped Lithium Niobate wafer

Specifications
Material: 3" 4" 6" LN wafer (Optical grade)
Orientation: X & Z
Surface finish: single or double sides polish (DLP/SLP/SSP/DSP all available )
Thickness: 0.18/0.25/0.35/0.50/1.00 mm
TTV: <1~5µm
BOW: ± (25µm ~40um )
Warp: <= 35µm
LTV (5mmx5mm): <1.5 um
PLTV(<0.5um): ≥98% (5mm*5mm) with 2mm edge excluded
Curie Temp: 1142°C±3°C
Edge: Compl't with SEMI M1.2@with GC800#. regular at C typed
Orientation flats: available, per request
Doped with: Er:LN, MgO:LN, Fe:LN, Er:MgO:LN
Polished side Ra: Roughness Ra<=5A
Back Side Criteria: Roughness Ra:0.5-1.0µm GC#1000
Edge Rounding: Compliant with SEMI M1.2 Standard/refer to IEC62276
Cracks, saw marks, stains: None
Single Domain: Completed Polarization/Reduced

The LiNbO3 (LN) crystal possesses stable physical, chemical, and mechanical properties, exhibiting high-temperature resistance, corrosion resistance, and ease of processing. It has a relatively high Curie temperature (Tο) with no phase transition from room temperature to Curie temperature, and it is resistant to depolarization, allowing for repeated use.

Moreover, when different types of ions are mixed into the LiNbO3 crystal, it exhibits various special properties, making it suitable for applications such as optical waveguide amplifiers, frequency-doubling converters, and optical storage media.

For example, in high-power laser applications, magnesium oxide-doped crystals (MgO:LiNbO3) are used.  They have a higher Laser Damage Threshold.  At the same time, the doping has no effect on the optical properties of the crystal.

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